DIODES DMT6002LPS-13

DIODES · FETs & Power MOSFETs · MPN DMT6002LPS-13

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Specifications

Gate Charge(Qg)130.8nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation167W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.555nF

Technical details

N-Channel 60V 100A 167W Surface Mount PowerDI5060-8

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