DIODES · FETs & Power MOSFETs · MPN DMT5012LFVW-7
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| Drain to Source Voltage | 50V |
|---|---|
| Gate Charge(Qg) | 17.6nC@10V |
| Current - Continuous Drain(Id) | 11.7A;51.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 2.7W;51.4W |
| RDS(on) | 13mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 738pF |
50V 2.3V 13mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS