DIODES DMT47M2SFVWQ-7

DIODES · FETs & Power MOSFETs · MPN DMT47M2SFVWQ-7

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Specifications

Gate Charge(Qg)12.1nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)49.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation27.1W
Reverse Transfer Capacitance (Crss@Vds)12.4pF
RDS(on)7.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)897pF
TypeN-Channel

Technical details

N-Channel 40V 49.1A 27.1W Surface Mount PowerDI3333-8

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