DIODES DMT47M2SFVW-13

DIODES · FETs & Power MOSFETs · MPN DMT47M2SFVW-13

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Specifications

Gate Charge(Qg)12.1nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)15.4A;49.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2.67W;27.1W
Reverse Transfer Capacitance (Crss@Vds)12.4pF
RDS(on)7.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)897pF

Technical details

40V 4V 7.5mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS

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