DIODES DMT47M2LDVQ-13

DIODES · FETs & Power MOSFETs · MPN DMT47M2LDVQ-13

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Specifications

Current - Continuous Drain(Id)30.2A
Pd - Power Dissipation14.8W
RDS(on)15mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2.3V
Drain to Source Voltage40V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)14.8pF
Number2 N-Channel
Input Capacitance(Ciss)891pF
Gate Charge(Qg)14nC@10V
Operating Temperature-55℃~+150℃

Technical details

30.2A 14.8W 15mΩ@4.5V 2.3V 2 N-Channel PowerDI3333-8 FET, MOSFET Arrays RoHS

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