DIODES DMT40M9LPS-13

DIODES · FETs & Power MOSFETs · MPN DMT40M9LPS-13

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Specifications

Gate Charge(Qg)159nC
Drain to Source Voltage40V
Current - Continuous Drain(Id)304A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)410pF
RDS(on)0.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.903nF
TypeN-Channel

Technical details

N-Channel 40V 304A 125W Surface Mount PowerDI5060-8

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