DIODES DMT4014LDV-13

DIODES · FETs & Power MOSFETs · MPN DMT4014LDV-13

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Specifications

Current - Continuous Drain(Id)26.5A
Pd - Power Dissipation2.1W
RDS(on)29mΩ@4.5V
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage40V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)21pF
Number2 N-Channel
Input Capacitance(Ciss)750pF
Gate Charge(Qg)11.2nC@10V
Operating Temperature-
Output Capacitance(Coss)225pF

Technical details

26.5A 2.1W 29mΩ@4.5V 3V 2 N-Channel VDFN-8 FET, MOSFET Arrays RoHS

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