DIODES DMT4011LSS-13

DIODES · FETs & Power MOSFETs · MPN DMT4011LSS-13

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Specifications

Gate Charge(Qg)14.3nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)10.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation1.31W
Reverse Transfer Capacitance (Crss@Vds)24.6pF
RDS(on)11.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)829pF

Technical details

40V 10.8A 1.31W 11.5mΩ@10V 1 N-channel SOP-8 Single FETs, MOSFETs RoHS

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