DIODES DMT4008LSS-13

DIODES · FETs & Power MOSFETs · MPN DMT4008LSS-13

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Specifications

Gate Charge(Qg)18.6nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)12.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.32W
Reverse Transfer Capacitance (Crss@Vds)24.9pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.143nF

Technical details

40V 12.8A 3V 1.32W 8.5mΩ@10V 1 N-channel SOP-8 Single FETs, MOSFETs RoHS

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