DIODES DMT4008LFV-13

DIODES · FETs & Power MOSFETs · MPN DMT4008LFV-13

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Specifications

Gate Charge(Qg)17.1nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)12.1A;54.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.9W;35.7W
Reverse Transfer Capacitance (Crss@Vds)42pF
RDS(on)7.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.179nF

Technical details

40V 3V 7.9mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS

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