DIODES DMT36M1LPS-13

DIODES · FETs & Power MOSFETs · MPN DMT36M1LPS-13

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Specifications

Gate Charge(Qg)16.7nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)456pF
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation42W
Reverse Transfer Capacitance (Crss@Vds)72pF
RDS(on)4.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.155nF

Technical details

N-Channel 30V 65A 42W Surface Mount PowerDI5060-8

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