DIODES · FETs & Power MOSFETs · MPN DMT35M8LDG-7
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| Current - Continuous Drain(Id) | 17A |
|---|---|
| RDS(on) | 4.7mΩ@10V |
| Pd - Power Dissipation | 2W |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Gate Charge(Qg) | 22.7nC@10V |
| Operating Temperature | -55℃~+150℃ |
17A 4.7mΩ@10V 2W 1.9V FET, MOSFET Arrays RoHS