DIODES DMT35M7LFV-7

DIODES · FETs & Power MOSFETs · MPN DMT35M7LFV-7

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)36nC@10V
Current - Continuous Drain(Id)76A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation1.98W
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.667nF

Technical details

30V 76A 2.4V 1.98W 5mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS

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