DIODES · FETs & Power MOSFETs · MPN DMT35M4LFVW-13
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| Gate Charge(Qg) | 16.1nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 16A;60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF |
| RDS(on) | 6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 982pF |
30V 2.5V 1.5W 6mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS