DIODES · FETs & Power MOSFETs · MPN DMT35M4LFDF4-7
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| Gate Charge(Qg) | 14.9nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 10.5mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.009nF |
30V 13A 2.5V 1.7W 10.5mΩ 1 N-channel X2-DFN2020-6 Single FETs, MOSFETs RoHS