DIODES DMT32M5LFG-13

DIODES · FETs & Power MOSFETs · MPN DMT32M5LFG-13

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Specifications

Gate Charge(Qg)67.7nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)333pF
RDS(on)2.8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)4.066nF
TypeN-Channel

Technical details

30V 100A 3V 50W 2.8mΩ@4.5V 1 N-channel N-Channel PowerDI3333-8 Single FETs, MOSFETs RoHS

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