DIODES · FETs & Power MOSFETs · MPN DMT32M4LPSW-13
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 68nC@10V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.3W;83W |
| Reverse Transfer Capacitance (Crss@Vds) | 186pF |
| RDS(on) | 1.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.944nF |
30V 100A 3V 1.7mΩ@10V 1 N-channel PowerDI5060-8 Single FETs, MOSFETs RoHS