DIODES · FETs & Power MOSFETs · MPN DMT32M4LFG-13
No reviews yet — be the first to review DIODES DMT32M4LFG-13.
| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 67nC@10V |
| Output Capacitance(Coss) | 1.568nF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 262pF |
| RDS(on) | 1.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.366nF |
| Type | N-Channel |
30V 100A 3V 2.6W 1.7mΩ@10V 1 N-channel N-Channel PowerDI3333-8 Single FETs, MOSFETs RoHS