DIODES DMT3022UEV-13

DIODES · FETs & Power MOSFETs · MPN DMT3022UEV-13

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Specifications

Current - Continuous Drain(Id)17A
Pd - Power Dissipation900mW
RDS(on)22mΩ@10V
Gate Threshold Voltage (Vgs(th))1.8V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)67pF
Number1 N-channel
Input Capacitance(Ciss)903pF
Operating Temperature-55℃~+150℃

Technical details

17A 900mW 22mΩ@10V 1.8V 1 N-channel FET, MOSFET Arrays RoHS

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