DIODES DMT3020LFDB-13

DIODES · FETs & Power MOSFETs · MPN DMT3020LFDB-13

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Specifications

Current - Continuous Drain(Id)7.7A
RDS(on)32mΩ@4.5V
Pd - Power Dissipation1.8W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)27pF
Number2 N-Channel
Input Capacitance(Ciss)393pF
Gate Charge(Qg)7nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)173pF

Technical details

7.7A 32mΩ@4.5V 1.8W 2.5V 2 N-Channel UDFN2020-6 FET, MOSFET Arrays RoHS

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