DIODES DMT3009UFVW-7

DIODES · FETs & Power MOSFETs · MPN DMT3009UFVW-7

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)7.4nC@10V
Current - Continuous Drain(Id)10.6A;30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation1.2W;2.6W
RDS(on)11mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)894pF

Technical details

30V 1.8V 11mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS

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