DIODES · FETs & Power MOSFETs · MPN DMT3009UFVW-13
No reviews yet — be the first to review DIODES DMT3009UFVW-13.
| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | - |
| Current - Continuous Drain(Id) | 10.6A;30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 1.2W;2.6W |
| RDS(on) | 11mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 894pF |
30V 1.8V 11mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS