DIODES · FETs & Power MOSFETs · MPN DMT3009LFVWQ-13
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 12nC@10V |
| Current - Continuous Drain(Id) | 12A;50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.3W;35.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF |
| RDS(on) | 11mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 823pF |
30V 3V 11mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS