DIODES DMT3009LFVW-7

DIODES · FETs & Power MOSFETs · MPN DMT3009LFVW-7

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Specifications

Gate Charge(Qg)12nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)352pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.3W
Reverse Transfer Capacitance (Crss@Vds)52pF
RDS(on)6.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)823pF

Technical details

N-Channel 30V 2.3W Surface Mount PowerDI-3333-8

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