DIODES DMT3009LFVW-13

DIODES · FETs & Power MOSFETs · MPN DMT3009LFVW-13

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)12nC@10V
Current - Continuous Drain(Id)12A;50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation35.7W
RDS(on)11mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)823pF

Technical details

30V 3V 35.7W 11mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS

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