DIODES DMT3006LFV-7

DIODES · FETs & Power MOSFETs · MPN DMT3006LFV-7

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Specifications

Gate Charge(Qg)16.7nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)456pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)72pF
RDS(on)11mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.155nF
TypeN-Channel

Technical details

30V 60A 3V 2W 11mΩ@4.5V 1 N-channel N-Channel PowerDI3333-8 Single FETs, MOSFETs RoHS

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