DIODES DMT3006LFG-13

DIODES · FETs & Power MOSFETs · MPN DMT3006LFG-13

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Specifications

Gate Charge(Qg)22.6nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)16A;55.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation27.8W
Reverse Transfer Capacitance (Crss@Vds)72pF
RDS(on)6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.32nF

Technical details

30V 3V 27.8W 6mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS

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