DIODES DMT2005UDV-7

DIODES · FETs & Power MOSFETs · MPN DMT2005UDV-7

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Specifications

Current - Continuous Drain(Id)50A
Pd - Power Dissipation1.9W
RDS(on)12mΩ@2.5V
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage24V
Type-
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)46.7nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)-

Technical details

50A 1.9W 12mΩ@2.5V 1.5V 2 N-Channel VDFN-8 FET, MOSFET Arrays RoHS

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