DIODES · FETs & Power MOSFETs · MPN DMT15H017LPSW-13
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| Gate Charge(Qg) | 50nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 9.4A;58A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 1.3W;89W |
| RDS(on) | 17.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.369nF |
150V 2.6V 17.5mΩ@10V 1 N-channel PowerDI5060-8 Single FETs, MOSFETs RoHS