DIODES · FETs & Power MOSFETs · MPN DMT12H065LFDF-7
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| Gate Charge(Qg) | 5.5nC@10V |
|---|---|
| Drain to Source Voltage | 115V |
| Current - Continuous Drain(Id) | 4.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 1W |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| RDS(on) | 65mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 252pF |
115V 4.3A 2.2V 1W 65mΩ@10V 1 N-channel UDFN2020-6 Single FETs, MOSFETs RoHS