DIODES DMT12H065LFDF-13

DIODES · FETs & Power MOSFETs · MPN DMT12H065LFDF-13

No reviews yet — be the first to review DIODES DMT12H065LFDF-13.

Specifications

Gate Charge(Qg)5.5nC@10V
Drain to Source Voltage115V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)4.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)43mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)252pF

Technical details

N-Channel 115V 4.3A Surface Mount UDFN2020-6

Related FETs & Power MOSFETs