DIODES DMT12H060LFDF-7

DIODES · FETs & Power MOSFETs · MPN DMT12H060LFDF-7

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Specifications

Drain to Source Voltage115V
Gate Charge(Qg)7.8nC
Current - Continuous Drain(Id)4.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation1.1W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)65mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)475pF

Technical details

N-Channel 115V 4.4A 1.1W Surface Mount UDFN2020-6

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