DIODES DMT12H007SPS-13

DIODES · FETs & Power MOSFETs · MPN DMT12H007SPS-13

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Specifications

Gate Charge(Qg)44nC@10V
Drain to Source Voltage120V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation2.9W
Reverse Transfer Capacitance (Crss@Vds)29pF
RDS(on)8.9mΩ@10V
Number-
Input Capacitance(Ciss)3.142nF

Technical details

120V 80A 2.9W 8.9mΩ@10V PowerDI5060-8 Single FETs, MOSFETs RoHS

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