DIODES · FETs & Power MOSFETs · MPN DMT10H9M9SH3
No reviews yet — be the first to review DIODES DMT10H9M9SH3.
| Gate Charge(Qg) | 30nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 84A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 114W |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.085nF |
100V 84A 4V 114W 9mΩ@10V 1 N-channel TO-251 Single FETs, MOSFETs RoHS