DIODES · FETs & Power MOSFETs · MPN DMT10H9M9SCT
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| Gate Charge(Qg) | 30nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 99A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
| Pd - Power Dissipation | 2.3W;156W |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 8.8mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | 2.085nF |
100V 99A 3.9V 8.8mΩ@10V TO-220-3 Single FETs, MOSFETs RoHS