DIODES · FETs & Power MOSFETs · MPN DMT10H9M9LCT
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| Gate Charge(Qg) | 40.2nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 101A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 2.3W;156W |
| Reverse Transfer Capacitance (Crss@Vds) | 15.7pF |
| RDS(on) | 8.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.309nF |
100V 101A 2.5V 8.5mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS