DIODES · FETs & Power MOSFETs · MPN DMT10H4M5LPS-13
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| Gate Charge(Qg) | 80nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 19A;100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 113W |
| Reverse Transfer Capacitance (Crss@Vds) | 25.5pF |
| RDS(on) | 4.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.843nF |
100V 2.5V 113W 4.3mΩ@10V 1 N-channel PowerDI5060-8 Single FETs, MOSFETs RoHS