DIODES DMT10H072LFV-7

DIODES · FETs & Power MOSFETs · MPN DMT10H072LFV-7

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Specifications

Gate Charge(Qg)4.5nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)4.7A;20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation2W
RDS(on)62mΩ
Number1 N-channel
Input Capacitance(Ciss)228pF

Technical details

N-Channel 100V 4.7A 20A 2W Surface Mount PowerDI3333-8

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