DIODES · FETs & Power MOSFETs · MPN DMT10H072LFV-13
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| Gate Charge(Qg) | 4.5nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 4.7A;20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 37.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF |
| RDS(on) | 62mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 228pF |
100V 2.8V 37.8W 62mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS