DIODES DMT10H072LFDF-7

DIODES · FETs & Power MOSFETs · MPN DMT10H072LFDF-7

No reviews yet — be the first to review DIODES DMT10H072LFDF-7.

Specifications

Drain to Source Voltage100V
Gate Charge(Qg)4.5nC@10V
Output Capacitance(Coss)89.3pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)2.5pF
RDS(on)62mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)228pF

Technical details

N-Channel 100V 4A 1.8W Surface Mount UDFN2020-6

Related FETs & Power MOSFETs