DIODES · FETs & Power MOSFETs · MPN DMT10H072LFDF-13
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 800mW |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF |
| RDS(on) | 62mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 228pF |
100V 4A 3V 800mW 62mΩ@10V 1 N-channel UDFN2020-6 Single FETs, MOSFETs RoHS