DIODES · FETs & Power MOSFETs · MPN DMT10H032LK3-13
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 11.9nC@10V |
| Current - Continuous Drain(Id) | 26A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3W |
| RDS(on) | 48mΩ@4.5V |
| Type | N-Channel |
100V 26A 2.5V 3W 48mΩ@4.5V N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS