DIODES DMT10H032LFVW-7

DIODES · FETs & Power MOSFETs · MPN DMT10H032LFVW-7

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Specifications

Gate Charge(Qg)6.3nC@4.5V;11.9nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)165pF
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V;2.5V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)6.9pF
RDS(on)22mΩ@10V;30mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)683pF

Technical details

N-Channel 100V 17A 2.5W Surface Mount PowerDI3333-8

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