DIODES DMT10H032LFVW-13

DIODES · FETs & Power MOSFETs · MPN DMT10H032LFVW-13

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)11.9nC@10V
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)6.9pF
RDS(on)32mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)683pF

Technical details

100V 17A 2.5V 1.3W 32mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS

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