DIODES DMT10H032LFDF-7

DIODES · FETs & Power MOSFETs · MPN DMT10H032LFDF-7

No reviews yet — be the first to review DIODES DMT10H032LFDF-7.

Specifications

Configuration-
Gate Charge(Qg)6.3nC@4.5V
Drain to Source Voltage100V
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)32mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)683pF

Technical details

N-Channel 100V 6A 1.3W Surface Mount UDFN2020-6

Related FETs & Power MOSFETs