DIODES DMT10H032LDV-7

DIODES · FETs & Power MOSFETs · MPN DMT10H032LDV-7

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Specifications

Current - Continuous Drain(Id)18A
RDS(on)36mΩ@10V
Pd - Power Dissipation2.4W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage100V
Reverse Transfer Capacitance (Crss@Vds)-
Number-
Input Capacitance(Ciss)683pF
Gate Charge(Qg)11.9nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)-

Technical details

18A 36mΩ@10V 2.4W 2.5V VDFN-8 FET, MOSFET Arrays RoHS

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