DIODES · FETs & Power MOSFETs · MPN DMT10H032LDV-13
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| Current - Continuous Drain(Id) | 18A |
|---|---|
| RDS(on) | 36mΩ@10V |
| Pd - Power Dissipation | 2.4W |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 100V |
| Type | - |
| Reverse Transfer Capacitance (Crss@Vds) | 6.9pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 683pF |
| Gate Charge(Qg) | 11.9nC@10V |
| Operating Temperature | - |
| Output Capacitance(Coss) | 165pF |
18A 36mΩ@10V 2.4W 2.5V 2 N-Channel VDFN-8 FET, MOSFET Arrays RoHS