DIODES · FETs & Power MOSFETs · MPN DMT10H025SK3-13
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 13.4nC |
| Output Capacitance(Coss) | 250pF |
| Current - Continuous Drain(Id) | 41.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 20.4pF |
| RDS(on) | 30mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.544nF |
N-Channel 100V 41.2A 1.4W Surface Mount TO-252(DPAK)