DIODES DMT10H017LPD-13

DIODES · FETs & Power MOSFETs · MPN DMT10H017LPD-13

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Specifications

Current - Continuous Drain(Id)54.7A
Pd - Power Dissipation78W
RDS(on)30.3mΩ@4.5V
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage100V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)20pF
Number2 N-Channel
Input Capacitance(Ciss)1.986nF
Gate Charge(Qg)28.6nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)333pF

Technical details

N-Channel Array 100V 54.7A 78W Surface Mount PowerDI5060-8

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