DIODES · FETs & Power MOSFETs · MPN DMT10H015LSS-13
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| Gate Charge(Qg) | 33.3nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 261pF |
| Current - Continuous Drain(Id) | 8.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 1.67W |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 12mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.871nF |
| Type | N-Channel |
N-Channel 100V 8.3A 1.67W Surface Mount SO-8